High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals
Journal of Applied Physics Volume 109 Issue 10
Page 103704-1-103704-4
published_at 2011-05-18
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| File | |
| Title ( eng ) |
High thermoelectric performance of Cu substituted type-VIII clathrate Ba8Ga16-xCuxSn30 single crystals
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| Creator |
Deng Shukang
Saiga Yuta
Kajisa Kousuke
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| Source Title |
Journal of Applied Physics
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| Volume | 109 |
| Issue | 10 |
| Start Page | 103704-1 |
| End Page | 103704-4 |
| Abstract |
Single crystalline samples of type-VIII clathrate Ba_8Ga_<16-x>Cu_xSn_<30> (0 ≤x ≤ 0.033) were prepared by the Sn-flux method. Upon substituting Cu for Ga, the carrier mobility at 300 K increases twice while the carrier density stays in the range 3.1-4.2×10^<19>/cm3. Consequently, the electrical resistivity is decreased from 5.3 mΩcm for x=0 to 3.2 mΩcm for x=0.033. Irrespective of x, the Seebeck coefficient is largely negative and linearly changes with temperature in the range 300<T<600 K. The thermal conductivity is in the range 0.68-0.74 W/Km at 300 K for all samples. The dimensionless figure of merit ZT for x=0.033 reaches the maximum of 1.35 at 540 K.
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| NDC |
Physics [ 420 ]
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
The American Institute of Physics
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| Date of Issued | 2011-05-18 |
| Rights |
Copyright (c) 2011 American Institute of Physics
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0021-8979
[DOI] 10.1063/1.3583570
[NCID] AA00693547
[DOI] http://dx.doi.org/10.1063/1.3583570
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