Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10

Physical review letters Volume 106 Issue 5 Page 056404-1-056404-4 published_at 2011-02-04
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Title ( eng )
Electronic-Structure-Driven Magnetic Ordering in a Kondo Semiconductor CeOs2Al10
Creator
Kimura Shin-ichi
Iizuka Takuya
Miyazaki Hidetoshi
Irizawa Akinori
Muro Yuji
Source Title
Physical review letters
Volume 106
Issue 5
Start Page 056404-1
End Page 056404-4
Descriptions
We report the anisotropic changes in the electronic structure of a Kondo semiconductor CeOs_2Al_<10> across an anomalous antiferromagnetic ordering temperature (T_0) of 29 K, using optical conductivity spectra. The spectra along the a and c axes indicate that an energy gap due to the hybridization between conduction bands and nearly local 4ƒ states, namely the c-ƒ hybridization gap, emerges from a higher temperature continuously across T_0. Along the b axis, on the other hand, another energy gap with a peak at 20 meV becomes visible at 39 K (>T_0) and fully opens at T_0 because of a charge instability. This result implies that the appearance of the energy gap, as well as the change in the electronic structure along the b axis, induces the antiferromagnetic ordering below T_0.
NDC
Physics [ 420 ]
Language
eng
Resource Type journal article
Publisher
The American Physical Society
Date of Issued 2011-02-04
Rights
Copyright (c) 2011 The American Physical Society
Publish Type Version of Record
Access Rights open access
Source Identifier
[ISSN] 0031-9007
[DOI] 10.1103/PhysRevLett.106.056404
[NCID] AA00773679
[DOI] http://dx.doi.org/10.1103/PhysRevLett.106.056404