Electrical Reliabilities of Highly Cross-Linked Porous Silica Film with Cesium Doping

Kayaba Yasuhisa

Kohmura Kazuo

Tanaka Hirofumi

Seino Yutaka

Odaira Toshiyuki

Nishiyama Fumitaka

Kinoshita Keizo

Chikaki Shinichi

Kikkawa Takamaro

Journal of The Electrochemical Society

A highly cross-linked porous silica dielectric (PoSiO) film was fabricated at a low temperature of 350°C. PoSiO films were derived by sol-gel method and their pore surface silanol groups were silylated with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) by vapor phase treatment. To promote the degree of siloxane cross-linkage of the film, cesium (Cs) was added to the precursor solution with the amount of 0, 5, 15, and 30 wt.-ppm as a catalyst. Then the amount of methyl-silicon-three oxygen (Me-Si T-type) and hydrogen-silicon-three oxygen (H-Si T-type) bridged structures of the chemisorbed TMCTS were increased, and the amount of surface silanol groups was decreased markedly with the increasing amount of Cs concentration. Leakage current and dielectric constant were measured under various humidity conditions, and which were hardly degraded for the highly cross-linked PoSiO owing to its small amount of residual silanol groups and adsorbed water. It was also shown that the amount of mobile protons originated from the silanol groups became negligible. Time zero dielectric breakdown (TZDB) field strength was improved to 6.7 MV/cm and a projected time dependent dielectric breakdown (TDDB) lifetime satisfied 10 years for Cs 30 ppm doped PoSiO under a stress conditions of 220°C and |E| = 1 MV/cm.

caesium

chemisorption

electric breakdown

leakage currents

low-k dielectric thin films

permittivity

porous materials

silicon compounds

Electrical engineering [ 540 ]

eng

The Electrochemical Society, Inc.

Copyright (c) 2008 The Electrochemical Society

[ISSN] 0013-4651

[DOI] 10.1149/1.2977973

[NCID] AA00697016

[DOI] http://dx.doi.org/10.1149/1.2977973