Shot noise modeling in metal-oxide-semiconductor field effect transistors under sub-threshold Condition

Isobe Yoshioki

Hara Kiyohito

Navarro Dondee

Takeda Youichi

Ezaki Tatsuya

Miura-Mattausch Mitiko

IEICE TRANSACTIONS on Electronics

We have developed a new simulation methodology for predicting shot noise intensity in Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). In our approach, shot noise in MOSFETs is calculated by employing the two dimensional device simulator MEDICI in conjunction with the shot noise model of p-n junction. The accuracy of the noise model has been demonstrated by comparing simulation results with measured noise data of p-n diodes. The intensity of shot noise in various n-MOSFET devices under various bias conditions was estimated beyond GHz operational frequency by using our simulation scheme. At DC or low-frequency region, sub-threshold current dominates the intensity of shot noise. Therefore, shot noise is independent on frequency in this region and its intensity is exponentially depends on VG, proportional to L-1, and almost independent on VD. At high-frequency region above GHz frequency, on the other hand, shot noise intensity is frequency dependent and is quite larger than that of low-frequency region. In particular, the intensity of the RF shot noise is almost independent on L, VD and VG. This suggests that high-frequency shot noise intensity is decided only by the conditions of source-bulk junction.

mosfet

shot noise

high frequency noise

simulation

sub-threshold current

Electrical engineering [ 540 ]

eng

電子情報通信学会

Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers

[ISSN] 0916-8524

[DOI] 10.1093/ietele/e90-c.4.885

[NCID] AA10826283

[DOI] http://dx.doi.org/10.1093/ietele/e90-c.4.885