Bonding state of the C60 molecule adsorbed on a Si(111)-(7X7) surface
Physical Review B - Condensed Matter and Materials Physics Volume 58 Issue 20
Page 13951-13956
published_at 1998-11-15
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Title ( eng ) |
Bonding state of the C60 molecule adsorbed on a Si(111)-(7X7) surface
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Creator |
Sakamoto Kazuyuki
Harada Masashi
Kondo Daiyu
Kakizaki Akito
Suto Shozo
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Source Title |
Physical Review B - Condensed Matter and Materials Physics
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Volume | 58 |
Issue | 20 |
Start Page | 13951 |
End Page | 13956 |
Abstract |
We report here the measurements of the valence spectra, the C 1s and the Si 2p core-level spectra of C60 molecules adsorbed on a Si(111)-(7X7) surface, using photoelectron spectroscopy. In the valence spectra, the highest occupied molecular orbital (HOMO) of a C60 splits into two peaks at a coverage lower than 0.25 ML. The binding energies of the split peaks are 1.8 and 2.4 eV. Taking into account the polarization-dependence of the valence spectra and the binding energy of the C 1s core-level spectra, it is found that the 2.4-eV peak observed in the valence spectra is the covalent bonding state between a C60 molecule and the Si substrate, and that the 1.8-eV peak is the shifted HOMO. The Si 2p core-level spectra suggest that the bonding site is localized at the interface. We also present the energy-level scheme of the bonding state in terms of the symmetry of the HOMO.
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Language |
eng
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Resource Type | journal article |
Publisher |
American Physical Society
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Date of Issued | 1998-11-15 |
Rights |
Copyright (c) 1998 The American Physical Society.
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Publish Type | Version of Record |
Access Rights | open access |
Source Identifier |
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.58.13951
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.56.7660
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