Direct observation of the Ce 4f states in the Kondo semiconductor CeRhAs and related compounds : A high-resolution resonant photoemission study
Physical Review B - Condensed Matter and Materials Physics Volume 66 Issue 15
Page 155202-1-155202-4
published_at 2002-10-03
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| File | |
| Title ( eng ) |
Direct observation of the Ce 4f states in the Kondo semiconductor CeRhAs and related compounds : A high-resolution resonant photoemission study
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| Creator |
Kobayashi Kenichi
Narimura Takamasa
Baltzer Peter
Suemitsu Toshiaki
Sasakawa Tetsuya
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 66 |
| Issue | 15 |
| Start Page | 155202-1 |
| End Page | 155202-4 |
| Abstract |
Ce 4f derived states at the Fermi level (EF) of the isostructural single crystals CeRhAs, CeRhSb, and CePtSn were observed directly by means of high-resolution (ΔE = 18-20 meV), low-temperature (10-12 K) photoemission spectroscopy with a photon energy of hv = 126 eV. The Ce 4f spectrum for the Kondo semiconductor CeRhAs exhibited no peak structure near EF, and its spectral intensity decreases monotonically above the binding energy ∼90 meV, thereby forming a large gap structure. The spectrum of the semimetal CeRhSb is enhanced above ∼120 meV, but decreases steeply above ∼13 meV, which indicates the existence of a narrow pseudogap at EF. A clear crystal field excitation at ∼27 meV, and a weak Kondo resonance at EF, were found in the metal CePtSn.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 2002-10-03 |
| Rights |
Copyright (c) 2002 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.66.155202
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.67.144408
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