Depth profile high-energy spectroscopic study of Mn-doped GaN prepared by thermal diffusion

Hwang Jong-Il

Osafune Yoshitaka

Kobayashi Masaki

Ebata Kazuaki

Ooki Yasuhiro

Ishida Yukiaki

Fujimori Atsushi

Takeda Yukiharu

Okane Tetsuo

Saitoh Yuji

Kobayashi Keisuke

Tanaka Arata

Journal of Applied Physics

We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep (∼70 Å) region of the GaN substrates and that the line shapes of Mn 3d partial density of states obtained by resonant photoemission measurements were close to that of Ga1-x Mnx N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements at the Mn L edge, it was revealed that the doped Mn ions were in the divalent Mn2+ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using p -type GaN substrates while samples using n -type GaN substrates showed only paramagnetism.

eng

American Institute of Physics

Copyright (c) 2007 American Institute of Physics.

[ISSN] 0021-8979

[DOI] 10.1063/1.2732679

[NCID] AA00693547

[DOI] http://dx.doi.org/10.1063/1.2732679