Orbital-Assisted Metal-Insulator Transition in VO2
Physical Review Letters Volume 95 Issue 19
published_at 2005-11-04
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| File | |
| Title ( eng ) |
Orbital-Assisted Metal-Insulator Transition in VO2
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| Creator |
Haverkort M.W.
Hu Z.
Reichelt W.
Streltsov S.V.
Korotin M.A.
Anisimov V.I.
Hsieh H.H.
Lin H.-J.
Chen C.T.
Khomskii D.I.
Tjeng L.H.
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| Source Title |
Physical Review Letters
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| Volume | 95 |
| Issue | 19 |
| Abstract |
We found direct experimental evidence for an orbital switching in the V 3d states across the metalinsulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2;3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 2005-11-04 |
| Rights |
Copyright (c) 2005 American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0031-9007
[DOI] 10.1103/PhysRevLett.95.196404
[NCID] AA00773679
[DOI] http://dx.doi.org/10.1103/PhysRevLett.95.196404
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