High-resolution photoemission study of Ce1-xLaxRhAs: A collapse of the energy gap in the Kondo semiconductor

Physica B: Condensed Matter Volume 383 Issue 1 Page 140-141 published_at 2006-08
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Title ( eng )
High-resolution photoemission study of Ce1-xLaxRhAs: A collapse of the energy gap in the Kondo semiconductor
Creator
Higashiguchi Mitsuharu
Fujimori S.-I.
Saitoh Y.
Fujimori A.
Sasakawa T.
Source Title
Physica B: Condensed Matter
Volume 383
Issue 1
Start Page 140
End Page 141
Abstract
High-resolution resonance-photoemission spectroscopy has been performed on the Ce1-xLaxRhAs (0≤x≤0.05) single crystal to elucidate a collapse of the energy gap in the Kondo semiconductor CeRhAs by La substitution. With increasing x, the spectral intensity of the Ce4f1 derived states near the Fermi level decreases and new 4f derived spectral feature appears at a higher binding energy. The Rh4d-derived states, on the other hand, are not significantly changed by the substitution. New 4f-derived states have incoherent nature, which is responsible for the collapse of the semiconducting state for x>∼0.02.
Keywords
Ce1-xLaxRhAs
resonance photoemission
Kondo semiconductor
NDC
Physics [ 420 ]
Language
eng
Resource Type journal article
Publisher
Elsevier B.V.
Date of Issued 2006-08
Rights
Copyright (c) 2006 Elsevier B.V.
Publish Type Author’s Original
Access Rights open access
Source Identifier
[ISSN] 0921-4526
[DOI] 10.1016/j.physb.2006.03.081
[NCID] AA10673546
[DOI] http://dx.doi.org/10.1016/j.physb.2006.03.081 isVersionOf