Analysis and Modeling of Injection Enhanced Insulated Gate Bipolar Transistor for Power Electronic Circuit Simulation

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Title ( eng )	Analysis and Modeling of Injection Enhanced Insulated Gate Bipolar Transistor for Power Electronic Circuit Simulation
Title ( jpn )	パワーエレクトロニクス回路シミュレーション用注入加速型IGBTの解析とモデル化
Creator	Yamamoto Takao
NDC	Electrical engineering [ 540 ]
Language	eng
Resource Type	doctoral thesis
Publish Type	Not Applicable (or Unknown)
Access Rights	open access
Source Identifier	・Takao Yamamoto, Masataka Miyake, and Mitiko Miura-Mattausch; Compact Modeling of Floating-Base Effect in Injection-Enhanced Insulated-Gate Bipolar Transistor Based on Potential Modification by Accumulated Charge; Japanese Journal of Applied Physics, 52, 04CP07 (2013). (doi: 10.7567/JJAP.52.04CP07) references ・Takao Yamamoto, Masataka Miyake, Hisato Kato, Uwe Feldmann, Hans Jurgen Mattausch and Mitiko Miura-Mattausch; Compact modeling of injection-enhanced insulated-gate bipolar transistor for accurate circuit switching prediction; Japanese Journal of Applied Physics, 53, 04EP13 (2014). (doi: 10.7567/JJAP.53.04EP13) references ・Takao Yamamoto, Masataka Miyake, Uwe Feldmann, Hans Jurgen Mattausch and Mitiko Miura-Mattausch; Compact Modeling of Injection Enhanced Insulated Gate Bipolar Transistor Optimized Influence of Frequency Dependent; IEICE Trans Electron., Vol.E97-C No.10 pp.1021-1027, Oct (2014). (doi; 10.1587/transele.E97.C.1021) references [DOI] http://doi.org/10.7567/JJAP.52.04CP07 references [DOI] http://doi.org/10.7567/JJAP.53.04EP13 references [DOI] http://doi.org/10.1587/transele.E97.C.1021 references
Dissertation Number	甲第6501号
Degree Name	Doctor of Engineering
Date of Granted	2014-09-25
Degree Grantors	広島大学