Prospective growth region for chemical vapor deposition synthesis of carbon nanotube on C-H-O ternary diagram

Diamond and Related Materials 19 巻 11 号 1401-1404 頁 2010-11 発行
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タイトル ( eng )
Prospective growth region for chemical vapor deposition synthesis of carbon nanotube on C-H-O ternary diagram
作成者
Tomie Takashi
Kohno Masamichi
収録物名
Diamond and Related Materials
19
11
開始ページ 1401
終了ページ 1404
抄録
Chemical vapor deposition has become a standard process for synthesizing carbon nanotubes. Since the successful use of chemical vapor deposition for the first time, much effort has been expended into exploring various carbon sources that can be used to synthesize carbon nanotubes, such as methane, ethane, and ethanol. However, whole perspectives for suitable carbon sources have not been clear. In this study, we performed experiments in order to determine that the appropriate C-H-O components ratio in raw materials can be used to synthesize carbon nanotubes. We also examined a variety of raw materials in our newly developed round-trip-type vacuum furnace in order to determine whether they could be used to synthesize a carbon nanotube. We used Raman spectroscopy to identify the developed carbon nanotube, and we plotted the component ratios of effective and ineffective materials on a C-H-O ternary diagram: in this diagram, the growth region became highly apparent. It should be noted that for the growth of the carbon nanotube, this region should satisfy the equation O<C<(H + O) in molar ratio. Furthermore, it was observed that adjusting the component ratios by mixing raw materials did not cause an inconsistency in the growth region.
著者キーワード
Nanotubes
Chemical vapor deposition
NDC分類
化学 [ 430 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
Elsevier Science SA
発行日 2010-11
権利情報
Copyright (c) 2010 Elsevier Ltd.
出版タイプ Author’s Original(十分な品質であるとして、著者から正式な査読に提出される版)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 0925-9635
[DOI] 10.1016/j.diamond.2010.08.005
[NCID] AA10819710
[DOI] http://dx.doi.org/10.1016/j.diamond.2010.08.005