Prospective growth region for chemical vapor deposition synthesis of carbon nanotube on C-H-O ternary diagram

Diamond and Related Materials Volume 19 Issue 11 Page 1401-1404 published_at 2010-11
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Title ( eng )
Prospective growth region for chemical vapor deposition synthesis of carbon nanotube on C-H-O ternary diagram
Creator
Tomie Takashi
Kohno Masamichi
Source Title
Diamond and Related Materials
Volume 19
Issue 11
Start Page 1401
End Page 1404
Abstract
Chemical vapor deposition has become a standard process for synthesizing carbon nanotubes. Since the successful use of chemical vapor deposition for the first time, much effort has been expended into exploring various carbon sources that can be used to synthesize carbon nanotubes, such as methane, ethane, and ethanol. However, whole perspectives for suitable carbon sources have not been clear. In this study, we performed experiments in order to determine that the appropriate C-H-O components ratio in raw materials can be used to synthesize carbon nanotubes. We also examined a variety of raw materials in our newly developed round-trip-type vacuum furnace in order to determine whether they could be used to synthesize a carbon nanotube. We used Raman spectroscopy to identify the developed carbon nanotube, and we plotted the component ratios of effective and ineffective materials on a C-H-O ternary diagram: in this diagram, the growth region became highly apparent. It should be noted that for the growth of the carbon nanotube, this region should satisfy the equation O<C<(H + O) in molar ratio. Furthermore, it was observed that adjusting the component ratios by mixing raw materials did not cause an inconsistency in the growth region.
Keywords
Nanotubes
Chemical vapor deposition
NDC
Chemistry [ 430 ]
Language
eng
Resource Type journal article
Publisher
Elsevier Science SA
Date of Issued 2010-11
Rights
Copyright (c) 2010 Elsevier Ltd.
Publish Type Author’s Original
Access Rights open access
Source Identifier
[ISSN] 0925-9635
[DOI] 10.1016/j.diamond.2010.08.005
[NCID] AA10819710
[DOI] http://dx.doi.org/10.1016/j.diamond.2010.08.005