Gate-extension overlap control by Sb tilt implantation
IEICE-Transactions on Electronics Volume E90-C Issue 5
Page 973-977
published_at 2007
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| File | |
| Title ( eng ) |
Gate-extension overlap control by Sb tilt implantation
|
| Creator |
Maeda Nobuhide
|
| Source Title |
IEICE-Transactions on Electronics
|
| Volume | E90-C |
| Issue | 5 |
| Start Page | 973 |
| End Page | 977 |
| Abstract |
Antimony tilt implantation has been utilized for source and drain extension formation of n-MOSFETs. The tilt implantation is a very convenient method to provide adequate overlap between the extensions and a gate electrode. MOSFET drive current was effectively improved by the tilt implantation without degrading short channel effects.
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| Keywords |
MOSFET
extension
gate
overlap
tilt implantation
Sb
|
| NDC |
Electrical engineering [ 540 ]
|
| Language |
eng
|
| Resource Type | journal article |
| Publisher |
電子情報通信学会
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| Date of Issued | 2007 |
| Rights |
Copyright (c) 2007 The Institute of Electronics, Information and Communication Engineers
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0916-8524
[DOI] 10.1093/ietele/e90-c.5.973
[NCID] AA10826283
[DOI] http://dx.doi.org/10.1093/ietele/e90-c.5.973
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