Core-level photoemission study of Ga1-xMnxAs
Physical Review B - Condensed Matter and Materials Physics Volume 58 Issue 8
Page R4211-R4214
published_at 1998-08-15
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| File | |
| Title ( eng ) |
Core-level photoemission study of Ga1-xMnxAs
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| Creator |
Okabayashi Jun
Rader Oliver
Mizokawa Takashi
Fujimori Atsushi
Hayashi Toshiaki
Tanaka Masaaki
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 58 |
| Issue | 8 |
| Start Page | R4211 |
| End Page | R4214 |
| Abstract |
We have studied the electronic structure of Mn impurities in GaAs by Mn 2p core-level photoemission spectroscopy. From cluster-model analysis assuming the neutral (Mn3+) or negatively ionized (Mn2+) ground state, electronic structure parameters have been obtained. In either case, the Mn d electron number is evaluated to be ∼5 using the obtained parameters, meaning that the neutral Mn3+ impurity, if it exists, consists of the Mn 3d5 configuration and a valence hole bound to it through p-d hybridization and/or Coulomb interaction. We discuss the exchange interaction between the Mn local spin and the valence hole as well as the stability of the neutral impurity against the ionization of the valence hole.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 1998-08-15 |
| Rights |
Copyright (c) 1998 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.58.R4211
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1063/1.2162752
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