Angle-resolved photoemission study of Ga1-xMnxAs
Physical Review B - Condensed Matter and Materials Physics Volume 64 Issue 12
Page 125304-1-125304-4
published_at 2001-09-06
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| File | |
| Title ( eng ) |
Angle-resolved photoemission study of Ga1-xMnxAs
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| Creator |
Okabayashi Jun
Rader Oliver
Mizokawa Takashi
Fujimori Atsushi
Hayashi Toshiaki
Tanaka Masaaki
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 64 |
| Issue | 12 |
| Start Page | 125304-1 |
| End Page | 125304-4 |
| Abstract |
Valence-band dispersions in Ga1-xMnxAs along the Γ-Δ-X line (k?[001]) are obtained by angle-resolved photoemission spectroscopy. Compared with the spectra of GaAs, a small energy shift caused by Mn doping is observed for one of the valence bands. In addition, states are observed near the Fermi level in Ga1-xMnxAs. These states show no clear dispersions and behave like an impurity band induced by Mn doping.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 2001-09-06 |
| Rights |
Copyright (c) 2001 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 0163-1829
[DOI] 10.1103/PhysRevB.64.125304
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.60.1678
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