Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study
Physical Review B - Condensed Matter and Materials Physics Volume 54 Issue 9
Page 6062-6064
published_at 1996-09-01
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| File | |
| Title ( eng ) |
Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study
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| Creator |
Nakamura Ko-ichi
Kitaoka Yoshio
Asayama Kunisuke
Nakamoto Go
Fujii Hironobu
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| Source Title |
Physical Review B - Condensed Matter and Materials Physics
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| Volume | 54 |
| Issue | 9 |
| Start Page | 6062 |
| End Page | 6064 |
| Abstract |
The magnetic field dependence of the spin-lattice relaxation rate 1/T1 of 119Sn in CeNiSn has been measured down to 20 mK in a field range of 0.2-8 T. (T1T)-1 is constant below 1 K, which depends on the external field in such a manner that its value stays constant to 2 T, while it increases linearly with the field up to 8 T. It is shown that this magnetic field dependence of (T1T)-1 is well explained by the simple scenario that the quasiparticle density of states at the Fermi level is produced by the Zeeman splitting of the up- and down-spin bands, keeping its V-shaped gapped structure unchanged for fields less than 8 T. The present experiment has elucidated that CeNiSn is in a semimetallic ground state with a low carrier density and the application of a magnetic field exceeding 2 T turns out to supply effective carriers.
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| Language |
eng
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| Resource Type | journal article |
| Publisher |
American Physical Society
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| Date of Issued | 1996-09-01 |
| Rights |
Copyright (c) 1996 The American Physical Society.
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| Publish Type | Version of Record |
| Access Rights | open access |
| Source Identifier |
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.54.6062
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.68.054416
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