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ID 20649
本文ファイル
著者
Nakamoto, Tatsuya
Sawamoto, Naoyuki
Uno, Shingo
Ohsugi, Takashi
Tajima, Hiroyasu
Takahashi, Tadayuki
Mitani, Takefumi
Tanaka, Takaaki
Nakazawa, Kazuhiro
キーワード
Silicon Strip Detector
Compton Camera
VA-chip
Gamma-ray detector
NDC
天文学・宇宙科学
抄録(英)
Double-sided silicon strip detectors (DSSD) provide a very promising technology for constructing a Compton Camera, which is expected to provide a high-sensitivity soft gamma-ray observation in the 0.1–20 MeV energy range. The merits of DSSD are the high energy resolution, high scattering efficiency, low radio-activation in the orbit, moderate radiation hardness, smaller Doppler broadening, large size, and stable performance. A key feature for optimal performance is the low noise level of the DSSD and the attached frontend electronics. We minimized the noise by optimization of the electrode geometry of the DSSD. We have thus obtained an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at -10◦C. It was found that the detection efficiency for gamma-rays was uniform over the DSSD and the signal charge split between neighboring strips was not significant. We also confirmed that the Compton imaging by two DSSDs achieved a good angular resolution close to the Doppler-broadening limit.
掲載誌名
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
541巻
1-2号
開始ページ
342
終了ページ
349
出版年月日
2005-04-01
出版者
Elsevier Science B.V.
ISSN
0168-9002
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
author
権利情報
Copyright (c) 2005 Elsevier B.V.
関連情報URL
部局名
理学研究科