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ID 16634
本文ファイル
著者
Shimizu, Hiroyasu
Kume, Tetsuji
Kuroda, Toyoki
Sasaki, Shigeo
NDC
物理学
抄録(英)
High-pressure Raman scattering of type-III silicon clathrate Ba 24Si100 has been measured up to 27 GPa at room temperature. Low-frequency vibrational modes associated with Ba atoms inside three kinds of cages were found around 45-90 cm-1. The Si framework Raman bands were observed around 115-415 cm-1, which are altogether shifted toward lower frequencies as compared to those of type-I Ba 8Si46. High-pressure phase transition occurs at 6.5 GPa, which seems to be due to the structural distortion induced by the increasing guest(Ba)-host(Si) couplings. Ba24Si100 becomes irreversibly amorphous above 23 GPa. This pressure is lower than those of type-I Si clathrates, which suggests that type-III structure is less stable than type-I under high pressures.
掲載誌名
Physical Review B - Condensed Matter and Materials Physics
71巻
9号
開始ページ
094108
出版年月日
2005-03-01
出版者
American Physical Society
ISSN
1098-0121
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 American Physical Society
関連情報URL
部局名
工学研究科