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ID 19294
本文ファイル
著者
Echizen, Yuji
Yoshino, Takenobu
Kobayashi, Katsushi
Nakamoto, Go
Fujii, Hironobu
抄録(英)
The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi1-xTxSn (T=Co, Cu, and Pt) and Ce1-yLayNiSn (x,y = 0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y = 0.01, while for x or y = 0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site.
掲載誌名
Physical Review B - Condensed Matter and Materials Physics
59巻
21号
開始ページ
13 878
終了ページ
13 881
出版年月日
1999-06-01
出版者
American Physical Society
ISSN
1098-0121
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 1999 The American Physical Society.
関連情報URL
部局名
先端物質科学研究科