Direct observation of the Ce 4f states in the Kondo semiconductor CeRhAs and related compounds : A high-resolution resonant photoemission study
この文献の参照には次のURLをご利用ください : https://ir.lib.hiroshima-u.ac.jp/00019287
ID | 19287 |
本文ファイル | |
著者 |
Kobayashi, Kenichi
Narimura, Takamasa
Baltzer, Peter
Suemitsu, Toshiaki
Sasakawa, Tetsuya
|
抄録(英) | Ce 4f derived states at the Fermi level (EF) of the isostructural single crystals CeRhAs, CeRhSb, and CePtSn were observed directly by means of high-resolution (ΔE = 18-20 meV), low-temperature (10-12 K) photoemission spectroscopy with a photon energy of hv = 126 eV. The Ce 4f spectrum for the Kondo semiconductor CeRhAs exhibited no peak structure near EF, and its spectral intensity decreases monotonically above the binding energy ∼90 meV, thereby forming a large gap structure. The spectrum of the semimetal CeRhSb is enhanced above ∼120 meV, but decreases steeply above ∼13 meV, which indicates the existence of a narrow pseudogap at EF. A clear crystal field excitation at ∼27 meV, and a weak Kondo resonance at EF, were found in the metal CePtSn.
|
掲載誌名 |
Physical Review B - Condensed Matter and Materials Physics
|
巻 | 66巻
|
号 | 15号
|
開始ページ | 155202-1
|
終了ページ | 155202-4
|
出版年月日 | 2002-10-03
|
出版者 | American Physical Society
|
ISSN | 1098-0121
|
NCID | |
出版者DOI | |
言語 |
英語
|
NII資源タイプ |
学術雑誌論文
|
広大資料タイプ |
学術雑誌論文
|
DCMIタイプ | text
|
フォーマット | application/pdf
|
著者版フラグ | publisher
|
権利情報 | Copyright (c) 2002 The American Physical Society.
|
関連情報URL | |
部局名 |
理学研究科
先端物質科学研究科
放射光科学研究センター
|