Thermoelectric performance of Zn-substituted type-VIII clathrate Ba8Ga16Sn30 single crystals
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ID | 33937 |
本文ファイル | |
著者 |
Du, Baoli
Saiga, Yuta
Kajisa, Kousuke
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NDC |
物理学
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抄録(英) | We have grown single-crystalline samples of Zn-substituted type-VIII clathrate Ba8Ga16Sn30 with n-type carriers by Sn-flux method. The actual compositions of the single crystals were found to be described as Ba8Ga15.8-2yZnySn30.2+y (y = 0 ∼ 0.54), where the charge balance is well maintained. As y goes from 0 to 0.42, the resistivity at 300 K decreases from 5.3 to 3.0 mΩ cm gradually, but the effective mass is essentially constant at 1.2 ∼ 1.5m0, indicating intact band structure near the conduction band minima upon Zn substitution for Ga. At elevated temperatures, the ambipolar effect on the thermal conductivity becomes less pronounced upon Zn doping, and the dimensionless figure of merit ZT for y = 0.07 and 0.42 remains at rather high values compared with the nondoped sample.
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掲載誌名 |
Journal of Applied Physics
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巻 | 111巻
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号 | 1号
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開始ページ | 013707
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出版年月日 | 2012
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出版者 | American Institute of Physics
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ISSN | 0021-8979
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | (c) 2012 American Institute of Physics
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関連情報URL | |
部局名 |
先端物質科学研究科
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