Impurity and doping effects on the pseudoenergy gap in CeNiSn : A Sn NMR study
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ID | 19293 |
本文ファイル | |
著者 |
Nakamura, Ko-ichi
Kitaoka, Yoshio
Asayama, Kunisuke
Nakamoto, Go
Tanaka, Hiroaki
Fujii, Hironobu
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抄録(英) | Measurements of 119Sn nuclear spin-lattice relaxation rate, 1/T1, and Knight shift, K, in the offstoichiometric compound CeNi1.01Sn and the substituted compounds CeNi1-xMxSn (M=Cu,Co) and Ce1-xLaxNiSn have been made in order to unravel the impurity and/or carrier doping effects on the V-shaped gapped state in CeNiSn. From the detailed analysis of the T dependence of 1/T1, it is shown that the density of states (DOS) is induced just at the Fermi level for CeNi1.01Sn, whereas the DOS increases progressively with the dopant in a finite-energy range near the Fermi level for the substituted compounds. The respective substitution of Co and La into Ni and Ce sites changes the gapped state into the nonmagnetic Fermi-liquid state, whereas the replacement of Ni by Cu with x> 0.06 gives rise to the antiferromagnetic (AF) ground state. It is suggested that the AF order is realized by the combined effect of the rapid collapse of the V-shaped gap and the increase of the DOS at the Fermi level. It has been found to lead to the magnetic ground state and the nonmagnetic Fermi-liquid state to dope electrons and holes into the renormalized conduction bands, respectively.
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掲載誌名 |
Physical Review B - Condensed Matter and Materials Physics
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巻 | 53巻
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号 | 10号
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開始ページ | 6385
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終了ページ | 6392
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出版年月日 | 1996-03-01
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出版者 | American Physical Society
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ISSN | 1098-0121
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 1996 The American Physical Society.
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関連情報URL | |
部局名 |
先端物質科学研究科
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