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ID 19293
本文ファイル
著者
Nakamura, Ko-ichi
Kitaoka, Yoshio
Asayama, Kunisuke
Nakamoto, Go
Tanaka, Hiroaki
Fujii, Hironobu
抄録(英)
Measurements of 119Sn nuclear spin-lattice relaxation rate, 1/T1, and Knight shift, K, in the offstoichiometric compound CeNi1.01Sn and the substituted compounds CeNi1-xMxSn (M=Cu,Co) and Ce1-xLaxNiSn have been made in order to unravel the impurity and/or carrier doping effects on the V-shaped gapped state in CeNiSn. From the detailed analysis of the T dependence of 1/T1, it is shown that the density of states (DOS) is induced just at the Fermi level for CeNi1.01Sn, whereas the DOS increases progressively with the dopant in a finite-energy range near the Fermi level for the substituted compounds. The respective substitution of Co and La into Ni and Ce sites changes the gapped state into the nonmagnetic Fermi-liquid state, whereas the replacement of Ni by Cu with x> 0.06 gives rise to the antiferromagnetic (AF) ground state. It is suggested that the AF order is realized by the combined effect of the rapid collapse of the V-shaped gap and the increase of the DOS at the Fermi level. It has been found to lead to the magnetic ground state and the nonmagnetic Fermi-liquid state to dope electrons and holes into the renormalized conduction bands, respectively.
掲載誌名
Physical Review B - Condensed Matter and Materials Physics
53巻
10号
開始ページ
6385
終了ページ
6392
出版年月日
1996-03-01
出版者
American Physical Society
ISSN
1098-0121
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 1996 The American Physical Society.
関連情報URL
部局名
先端物質科学研究科