Electronic structure of YbGa1.15Si0.85 and YbGaxGe2-x probed by resonant x-ray emission and photoelectron spectroscopies
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ID | 31965 |
本文ファイル | |
著者 |
Yamaoka, Hitoshi
Jarrige, Ignace
Tsujii, Naohito
Imai, Motoharu
Lin, Jung-Fu
Matsunami, Masaharu
Eguchi, Ritsuko
Arita, Masashi
Taguchi, Munetaka
Senba, Yasunori
Ohashi, Haruhiko
Hiraoka, Nozomu
Ishii, Hirofumi
Tsuei, Ku-Ding
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NDC |
物理学
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抄録(英) | We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa_<1.15>Si_<0.85> and nonsuperconducting ternary germanide YbGa_xGe_<2-x> (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa_<1.15>Si_<0.85> no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb^<2+> state partially including itinerant electrons to the localized Yb^<3+> state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa_<1.15>Si_<0.85> and YbGa_xGe_<2-x>, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa_<1.15>Si_<0.85> and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.
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掲載誌名 |
Physical Review B
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巻 | 83巻
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号 | 10号
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開始ページ | 104525-1
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終了ページ | 104525-10
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出版年月日 | 2011-03-31
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出版者 | The American Physical Society
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ISSN | 1098-0121
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 2011 The American Physical Society
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関連情報URL | |
部局名 |
放射光科学研究センター
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