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ID 31999
本文ファイル
著者
Lee, Kyu Joon
Choo, Sung Min
Saiga, Yuta
Jung, Myung-Hwa
NDC
物理学
抄録(英)
We report the dramatic change of gapless semiconductor properties by different chemical doping elements of Co and Mn into PbPdO_2. The metal-insulatorlike transition temperature T_<MI> = 100 K for PbPdO_2 shifts to a higher temperature of 150 K by the Co doping and to a lower temperature of 70 K by the Mn doping. Because of the anisotropic band structure with the majority of heavy holes and the minority of light electrons, the transport and magnetic properties are significantly changed by the chemical doping elements. At low temperatures, the Co doping enhances ferromagnetic interactions, whereas the Mn doping favors antiferromagnetic interactions. These results are of great interests because you can control the magnetic ordering as well as manipulate the carrier density by changing the doping elements. These materials could be a good candidate for spintronics applications.
掲載誌名
Journal of Applied Physics
109巻
7号
開始ページ
07C316-1
終了ページ
07C316-3
出版年月日
2011-03-29
出版者
The American Institute of Physics
ISSN
0021-8979
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2011 American Institute of Physics
関連情報URL
部局名
先端物質科学研究科