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ID 21461
本文ファイル
著者
Tsubota, M.
Iga, Fumitoshi
NDC
物理学
抄録(英)
We performed optical-pump terahertz-probe measurements of a Mott insulator YTiO3 and a band semiconductor Si using a laser diode (1.47 eV) and a femtosecond-pulse laser (1.55 eV). Both samples possess long energy-relaxation times (1.5 ms for YTiO3 and 15 mu s for Si); therefore, it is possible to extract terahertz complex conductivities of photoinduced carriers under equilibrium. We observed highly contrasting behaviour-Drude conductivity in Si and localized conductivity possibly obeying the Jonscher law in YTiO3. The carrier number at the highest carrier-concentration layer in YTiO3 is estimated to be 0.015 per Ti site. Anisotropic conductivity of YTiO3 is determined. Our study indicates that localized carriers might play an important role in the incipient formation of photoinduced metallic phases in Mott insulators. In addition, this study shows that the transfer-matrix method is effective for extracting an optical constant of a sample with a spatially inhomogeneous carrier distribution.
掲載誌名
Journal of Physics-Condensed Matter
19巻
40号
開始ページ
406224
出版年月日
2007-10
出版者
IOP Publishing Ltd
ISSN
0953-8984
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
author
権利情報
Copyright(c) 2007 IOP Publishing Ltd
関連情報URL(IsVersionOf)
http://dx.doi.org/10.1088/0953-8984/19/40/406224
部局名
先端物質科学研究科