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ID 31965
本文ファイル
著者
Yamaoka, Hitoshi
Jarrige, Ignace
Tsujii, Naohito
Imai, Motoharu
Lin, Jung-Fu
Matsunami, Masaharu
Eguchi, Ritsuko
Arita, Masashi
Taguchi, Munetaka
Senba, Yasunori
Ohashi, Haruhiko
Hiraoka, Nozomu
Ishii, Hirofumi
Tsuei, Ku-Ding
NDC
物理学
抄録(英)
We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa_<1.15>Si_<0.85> and nonsuperconducting ternary germanide YbGa_xGe_<2-x> (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa_<1.15>Si_<0.85> no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb^<2+> state partially including itinerant electrons to the localized Yb^<3+> state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa_<1.15>Si_<0.85> and YbGa_xGe_<2-x>, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa_<1.15>Si_<0.85> and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.
掲載誌名
Physical Review B
83巻
10号
開始ページ
104525-1
終了ページ
104525-10
出版年月日
2011-03-31
出版者
The American Physical Society
ISSN
1098-0121
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
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権利情報
Copyright (c) 2011 The American Physical Society
関連情報URL
部局名
放射光科学研究センター