Electronic properties of a UIrGe single crystal
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ID | 19290 |
本文ファイル | |
著者 |
Prokeš, Karel
Tahara, Tomohiro
Fujita, Toshizo
Goshima, Hiroshi
Mihalik, Marián
Menovsky, Alois A.
Fukuda, Shuichi
Sakurai, Junji
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抄録(英) | Structural study by means of x-ray powder diffraction and Laue technique show that UIrGe crystallizes in the orthorhombic TiNiSi-type structure. Magnetic measurements reveal a huge magnetic anisotropy in UIrGe with the hard magnetization axis along the a axis, i.e., along the direction of U-U zig-zag chains. Comprehensive magnetic, electrical-transport, thermopower, and thermal studies on a single crystal indicate the magnetic order of UIrGe below 15.8 K with an additional transition at 14.1 K. Magnetic and transport measurements on the polycrystalline sample, however, suggest that UIrGe orders magnetically at 16.4 K. All anomalies shift towards lower temperatures with increasing magnetic field suggesting that an antiferromagnetic ground state takes place in UIrGe at low temperatures. The drastically different low-temperature behavior of the electrical resistivity for single crystal (increasing with decreasing temperature) as compared with that for the polycrystalline sample (electrical resistivity decreases with lowering temperature) suggests different physical properties of bulk and surface areas. Resistivity and thermoelectric measurements indicate that a small gap across a part of the Fermi surface is established in the case of the single crystal.
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掲載誌名 |
Physical Review B - Condensed Matter and Materials Physics
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巻 | 60巻
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号 | 13号
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開始ページ | 9532
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終了ページ | 9538
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出版年月日 | 1999-10-01
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出版者 | American Physical Society
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ISSN | 1098-0121
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 1999 The American Physical Society.
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関連情報URL | |
部局名 |
先端物質科学研究科
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