Effective carrier doping by magnetic field into a pseudogapped state in CeNiSn : A Sn NMR study
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ID | 19289 |
本文ファイル | |
著者 |
Nakamura, Ko-ichi
Kitaoka, Yoshio
Asayama, Kunisuke
Nakamoto, Go
Fujii, Hironobu
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抄録(英) | The magnetic field dependence of the spin-lattice relaxation rate 1/T1 of 119Sn in CeNiSn has been measured down to 20 mK in a field range of 0.2-8 T. (T1T)-1 is constant below 1 K, which depends on the external field in such a manner that its value stays constant to 2 T, while it increases linearly with the field up to 8 T. It is shown that this magnetic field dependence of (T1T)-1 is well explained by the simple scenario that the quasiparticle density of states at the Fermi level is produced by the Zeeman splitting of the up- and down-spin bands, keeping its V-shaped gapped structure unchanged for fields less than 8 T. The present experiment has elucidated that CeNiSn is in a semimetallic ground state with a low carrier density and the application of a magnetic field exceeding 2 T turns out to supply effective carriers.
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掲載誌名 |
Physical Review B - Condensed Matter and Materials Physics
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巻 | 54巻
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号 | 9号
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開始ページ | 6062
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終了ページ | 6064
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出版年月日 | 1996-09-01
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出版者 | American Physical Society
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ISSN | 1098-0121
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 1996 The American Physical Society.
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関連情報URL | |
部局名 |
先端物質科学研究科
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