Highly sensitive ion detection using Si single-electron transistors
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ID | 34090 |
本文ファイル | |
著者 |
Kudo, Takashi
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NDC |
電気工学
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抄録(英) | Si single-electron transistors (SETs) were used for highly sensitive ion detection. A multiple-island channel structure was adapted in the SET for room-temperature operation. Clear Coulomb oscillation and diamonds were observed at room temperature. Using the Coulomb oscillation, clear pH responses of drain current (Id)-gate voltage (Vg) characteristics were obtained despite the existence of Id noise. Because Coulomb oscillations have a possibility to increase the slope of Id over Vg near the half-maximum current of the peaks, high resolving power of ion, and/or biomolecule concentration can be expected. A Si-structure will make it possible to integrate the sensors on a single chip.
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掲載誌名 |
Applied Physics Letters
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巻 | 98巻
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号 | 12号
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開始ページ | 123705
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出版年月日 | 2011
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出版者 | American Institute of Physics
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ISSN | 0003-6951
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | (c) 2011 American Institute of Physics
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関連情報URL | |
部局名 |
ナノデバイス・システム研究センター
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