Functional gate metal-oxide-semiconductor field-effect transistors using tunnel injection/ejection of trap charges enabling self-adjustable threshold voltage for ultralow power operation
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ID | 34089 |
本文ファイル | |
著者 |
Kudo, Takashi
Ito, Takashi
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NDC |
電気工学
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抄録(英) | Metal-oxide-semiconductor field-effect transistors (MOSFETs) with a functional gate, which enables self-adjustment of threshold voltage (Vth), were proposed for ultralow power operation and fabricated with conventional complementary metal-oxide-semiconductor (CMOS) technology. In the on-current state of fabricated nMOSFETs, electron ejection from the charge trap layer by direct tunneling makes Vth low and increases on-current further. In the off-current state, electron injection into the charge trap layer makes Vth high and suppresses subthreshold leakage current. Although the characteristic time of electron transfer of the functional gate from on-current state to off-current state is fairly long, the logic mode operating principle has been verified with the experimental device. Reduction of tunnel oxide thickness (Tox) will reduce the time, which will lead to the practical use of the proposed device for CMOS logic application.
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掲載誌名 |
Applied Physics Letters
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巻 | 98巻
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号 | 5号
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開始ページ | 053501
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出版年月日 | 2011
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出版者 | American Institute of Physics
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ISSN | 0003-6951
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | (c) 2011 American Institute of Physics
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関連情報URL | |
部局名 |
ナノデバイス・システム研究センター
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