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ID 18602
本文ファイル
著者
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
抄録(英)
Bulk (well) bias effects (grounded, positively biased, and floating) on both static and dynamic negative bias temperature instability of p -channel metal-oxide-semiconductor field-effect transistors with ultrathin SiON gate dielectrics were systematically investigated. The device degradation under both static and dynamic negative bias temperature (NBT) stresses with relatively large gate voltage (Vg) is significantly enhanced by a positive bulk bias (Vb). Moreover, the device degradation under bipolar pulsed bias temperature (BT) stress is dramatically enhanced by floating the bulk electrode. Both phenomena can be attributed to an additional degradation related to hot hole injection. The holes are energized by an electrical field of the induced depletion region between channel and bulk provided by the positive Vb or, in the case of bipolar pulsed BT stress with the bulk electrode floating, by the transient depletion region below the channel induced by the p-n junction between source (drain) and bulk upon the gate voltage Vg being switched from positive to negative with a transition time less than about 0.2-100 ms.
掲載誌名
Journal of Applied Physics
99巻
6号
出版年月日
2006-05-15
出版者
American Institute of Physics
ISSN
0021-8979
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2006 American Institute of Physics.
関連情報URL
部局名
ナノデバイス・システム研究センター