このエントリーをはてなブックマークに追加
ID 18601
本文ファイル
著者
Ohkura, Kensaku
Kitade, Tetsuya
抄録(英)
We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined islands. The conduction mechanism was systematically investigated in the temperature range from 4.2 K to 100 K. Despite their island size variation, some of the SETs showed clear periodic and quasiperiodic Coulomb oscillations. This is in contrast to the conventional idea that only geometrically uniform islands show periodic Coulomb oscillations. We showed theoretically that periodic Coulomb oscillation appears under the small deviation of gate capacitances with the period determined by the average of the capacitances. We also found that the formed charge soliton that was conducted through the islands was spread over the whole array. This may also contribute to the periodicity of the Coulomb oscillation. The SET with multiple islands was applied to an Exclusive-OR circuit and achieved a room temperature operation.
掲載誌名
Journal of Applied Physics
98巻
12号
出版年月日
2005-12-15
出版者
American Institute of Physics
ISSN
0021-8979
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 American Institute of Physics.
関連情報URL
部局名
ナノデバイス・システム研究センター