Interface trap and oxide charge generation under negative bias temperature instability of p-channel metal-oxide-semiconductor field-effect transistors with ultrathin plasma-nitrided SiON gate dielectrics
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ID | 18600 |
本文ファイル | |
著者 |
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
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抄録(英) | The interface trap generation (Δ Nit) and fixed oxide charge buildup (Δ Not) under negative bias temperature instability (NBTI) of p -channel metal-oxide-semiconductor field-effect transistors (p MOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for Δ Nit and Δ Not. At the earlier stress times, Δ Nit dominates the threshold voltage shift (Δ Vth) and Δ Not is negligible. With increasing stress time, the rate of increase of Δ Nit decreases continuously, showing a saturating trend for longer stress times, while Δ Not still has a power-law dependence on stress time so that the relative contribution of Δ Not increases. The thermal activation energy of Δ Nit and the NBTI lifetime of p MOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.
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掲載誌名 |
Journal of Applied Physics
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巻 | 98巻
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号 | 11号
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出版年月日 | 2005-12-01
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出版者 | American Institute of Physics
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ISSN | 0021-8979
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 2005 American Institute of Physics.
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関連情報URL | |
部局名 |
ナノデバイス・システム研究センター
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