Cotunneling current in Si single-electron transistor based on multiple islands
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ID | 18599 |
本文ファイル | |
著者 |
Ohkura, Kensaku
Kitade, Tetsuya
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抄録(英) | The authors fabricated highly doped Si single-electron transistors (SETs) with three islands. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and is exponentially suppressed by multiplexing islands, SETs with multiple islands are promising for the practical application such as reliable circuit operations.
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掲載誌名 |
Applied Physics Letters
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巻 | 89巻
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号 | 18号
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出版年月日 | 2006-10-30
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出版者 | American Institute of Physics
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ISSN | 0003-6951
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 2006 American Institute of Physics.
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関連情報URL | |
部局名 |
ナノデバイス・システム研究センター
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