Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
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ID | 18598 |
本文ファイル | |
著者 |
Kitade, Tetsuya
Ohkura, Kensaku
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抄録(英) | We fabricated highly doped Si single-electron transistors (SETs) with a series of geometrically defined multiple islands. Highly doped SETs have the advantage of being easy to fabricate. Moreover, SETs with multiple islands provide a larger peak-to-valley current ratio (PVCR) than SETs with a single island. A PVCR for the Coulomb oscillation of up to 77 was observed at room temperature. This large PVCR is advantageous for circuit operations. We applied the Coulomb oscillation and multiple-gate input characteristics of only one SET to obtain an exclusive-OR operation at room temperature.
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掲載誌名 |
Applied Physics Letters
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巻 | 86巻
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号 | 12号
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出版年月日 | 2005-05-21
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出版者 | American Institute of Physics
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ISSN | 0003-6951
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 2005 American Institute of Physics.
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関連情報URL | |
部局名 |
ナノデバイス・システム研究センター
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