Abnormal enhancement of interface trap generation under dynamic oxide field stress at MHz region
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ID | 18597 |
本文ファイル | |
著者 |
Zhu, Shiyang
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抄録(英) | By stressing metal-oxide-semiconductor field-effect transistors with ultrathin silicon dioxide or oxynitride gate dielectrics under square wave form voltage at the MHz region, an abnormal enhancement of interface trap generation in the midchannel region has been observed at some special frequencies. A hypothesis, including self-accelerating interface trap generation originated from the positive feedback of a charge pumping current to be contributed by the stress-induced near-interface oxide traps and a resonant tunneling via the near interface oxide trap states at those frequencies, is proposed to explain the observed phenomenon.
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掲載誌名 |
Applied Physics Letters
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巻 | 86巻
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号 | 8号
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出版年月日 | 2005-02-21
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出版者 | American Institute of Physics
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ISSN | 0003-6951
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NCID | |
出版者DOI | |
言語 |
英語
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NII資源タイプ |
学術雑誌論文
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広大資料タイプ |
学術雑誌論文
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DCMIタイプ | text
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フォーマット | application/pdf
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著者版フラグ | publisher
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権利情報 | Copyright (c) 2005 American Institute of Physics.
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関連情報URL | |
部局名 |
ナノデバイス・システム研究センター
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