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ID 18600
本文ファイル
著者
Zhu, Shiyang
Ohashi, Takuo
Miyake, Hideharu
抄録(英)
The interface trap generation (Δ Nit) and fixed oxide charge buildup (Δ Not) under negative bias temperature instability (NBTI) of p -channel metal-oxide-semiconductor field-effect transistors (p MOSFETs) with ultrathin (2 nm) plasma-nitrided SiON gate dielectrics were studied using a modified direct-current-current-voltage method and a conventional subthreshold characteristic measurement. Different stress time dependences were shown for Δ Nit and Δ Not. At the earlier stress times, Δ Nit dominates the threshold voltage shift (Δ Vth) and Δ Not is negligible. With increasing stress time, the rate of increase of Δ Nit decreases continuously, showing a saturating trend for longer stress times, while Δ Not still has a power-law dependence on stress time so that the relative contribution of Δ Not increases. The thermal activation energy of Δ Nit and the NBTI lifetime of p MOSFETs, compared at a given stress voltage, are independent of the peak nitrogen concentration of the SiON film. This indicates that plasma nitridation is a more reliable method for incorporating nitrogen in the gate oxide.
掲載誌名
Journal of Applied Physics
98巻
11号
出版年月日
2005-12-01
出版者
American Institute of Physics
ISSN
0021-8979
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 American Institute of Physics.
関連情報URL
部局名
ナノデバイス・システム研究センター