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ID 18599
本文ファイル
著者
Ohkura, Kensaku
Kitade, Tetsuya
抄録(英)
The authors fabricated highly doped Si single-electron transistors (SETs) with three islands. The valley current of the obtained Coulomb oscillation was systematically investigated in comparison with the cotunneling theory. The temperature dependence of the valley current was well described by the inelastic cotunneling theory above 40 K in the low drain voltage region. Since the inelastic cotunneling current was confirmed to be dominant in the high temperature region and is exponentially suppressed by multiplexing islands, SETs with multiple islands are promising for the practical application such as reliable circuit operations.
掲載誌名
Applied Physics Letters
89巻
18号
出版年月日
2006-10-30
出版者
American Institute of Physics
ISSN
0003-6951
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2006 American Institute of Physics.
関連情報URL
部局名
ナノデバイス・システム研究センター