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ID 19269
本文ファイル
著者
Hwang, Jong-Il
Osafune, Yoshitaka
Kobayashi, Masaki
Ebata, Kazuaki
Ooki, Yasuhiro
Ishida, Yukiaki
Fujimori, Atsushi
Takeda, Yukiharu
Okane, Tetsuo
Saitoh, Yuji
Kobayashi, Keisuke
抄録(英)
We have performed an in situ depth profile study of Mn-doped GaN prepared by a low temperature thermal diffusion method using photoemission and x-ray absorption spectroscopy. It was revealed from the core-level photoemission measurements that Mn ions are diffused into a deep (∼70 Å) region of the GaN substrates and that the line shapes of Mn 3d partial density of states obtained by resonant photoemission measurements were close to that of Ga1-x Mnx N thin films grown by molecular-beam epitaxy. From x-ray absorption spectroscopy and x-ray magnetic circular dichroism measurements at the Mn L edge, it was revealed that the doped Mn ions were in the divalent Mn2+ state and primarily paramagnetic. In magnetization measurements, weak hysteresis was detected in samples prepared using p -type GaN substrates while samples using n -type GaN substrates showed only paramagnetism.
掲載誌名
Journal of Applied Physics
101巻
10号
開始ページ
103709-1
終了ページ
103709-6
出版年月日
2007-05-22
出版者
American Institute of Physics
ISSN
0021-8979
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2007 American Institute of Physics.
関連情報URL
部局名
先端物質科学研究科