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ID 18612
本文ファイル
著者
Haverkort, M.W.
Hu, Z.
Reichelt, W.
Streltsov, S.V.
Korotin, M.A.
Anisimov, V.I.
Hsieh, H.H.
Lin, H.-J.
Chen, C.T.
Khomskii, D.I.
Tjeng, L.H.
抄録(英)
We found direct experimental evidence for an orbital switching in the V 3d states across the metalinsulator transition in VO2. We have used soft-x-ray absorption spectroscopy at the V L2;3 edges as a sensitive local probe and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective bandwidths are reduced, that the system becomes more one dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime.
掲載誌名
Physical Review Letters
95巻
19号
出版年月日
2005-11-04
出版者
American Physical Society
ISSN
0031-9007
NCID
出版者DOI
言語
英語
NII資源タイプ
学術雑誌論文
広大資料タイプ
学術雑誌論文
DCMIタイプ
text
フォーマット
application/pdf
著者版フラグ
publisher
権利情報
Copyright (c) 2005 American Physical Society.
関連情報URL
部局名
先端物質科学研究科