Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies

Physical Review B 83 巻 24 号 245116-1-245116-5 頁 2011-06-22 発行
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タイトル ( eng )
Electronic structure of a narrow-gap semiconductor FeGa3 investigated by photoemission and inverse photoemission spectroscopies
作成者
Arita Masashi
Utsmi Yuki
Morimoto Osamu
Hadano Yuta
収録物名
Physical Review B
83
24
開始ページ 245116-1
終了ページ 245116-5
内容記述
We have performed a photoemission and inverse photoemission spectroscopic study of a narrow-gap semiconductor FeGa_3, in order to characterize the occupied and unoccupied electronic states. The energy-gap size was found to be ~0.4 eV, and the valence-band maximum (VBM) was located around the A point of the Brillouin zone. We observed a dispersive Ga 4sp derived band near the Fermi level (E_F), and Fe 3d narrow bands located at -0.5 and -1.1 eV away from E_F. In contrast to the case of FeSi, there was no temperature-dependent peak enhancement at the VBM on cooling. The observed density of states and band dispersions were reasonably reproduced by the LDA+U calculation with the on-site effective Coulomb interaction U_<eff> ~3 eV to the Fe 3d states. Present results indicate that, in spite of sizable U_<eff>/W ~0.6 (W: band width), electron correlation effects are not significant in FeGa_3 compared with FeSi since the VBM consists of the dispersive band with the reduced Fe 3d contribution, and the energy gap is large.
NDC分類
物理学 [ 420 ]
言語
英語
資源タイプ 学術雑誌論文
出版者
The American Physical Society
発行日 2011-06-22
権利情報
Copyright (c) 2011 The American Physical Society
出版タイプ Version of Record(出版社版。早期公開を含む)
アクセス権 オープンアクセス
収録物識別子
[ISSN] 1098-0121
[DOI] 10.1103/PhysRevB.83.245116
[NCID] AA11187113
[DOI] http://dx.doi.org/10.1103/PhysRevB.83.245116