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ID 35129
file
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title alternative
NAND型フラッシュメモリセルの研究
creator
Aritome, Seiichi
NDC
Technology. Engineering
abstract
This paper presents the device technologies of NAND Flash memory to realize low bit cost and high reliability.

First, planar (two-dimensional) NAND Flash memory cells are discussed. Four types of NAND Flash memory cells of the LOCOS (LOCal Oxidation of Silicon) isolation cell, the SA-STI cell (Self-Aligned Shallow Trench Isolation cell) with FG wing, the SA-STI cell without FG wing, and SWATT cell (Side WAll Transfer Transistor cell) have been proposed and developed. By using these proposed memory cell, NAND Flash memory cell has been scaled down over 20 years to achieve small memory die size, high performance, and high reliability.……
language
eng
nii type
Thesis or Dissertation
HU type
Doctoral Theses
DCMI type
text
format
application/pdf
text version
ETD
rights
Copyright(c) by Author
grantid
甲第6228号
degreeGrantor
広島大学(Hiroshima University)
degreename Ja
博士(工学)
degreename En
Engineering
degreelevel
doctoral
date of granted
2013-09-25
department
Graduate School of Advanced Sciences of Matter