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ID 25917
file
creator
Kohmura, Kazuo
Tanaka, Hirofumi
Seino, Yutaka
Odaira, Toshiyuki
Nishiyama, Fumitaka
Kinoshita, Keizo
Chikaki, Shinichi
subject
caesium
chemisorption
electric breakdown
leakage currents
low-k dielectric thin films
permittivity
porous materials
silicon compounds
NDC
Electrical engineering
abstract
A highly cross-linked porous silica dielectric (PoSiO) film was fabricated at a low temperature of 350°C. PoSiO films were derived by sol-gel method and their pore surface silanol groups were silylated with 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) by vapor phase treatment. To promote the degree of siloxane cross-linkage of the film, cesium (Cs) was added to the precursor solution with the amount of 0, 5, 15, and 30 wt.-ppm as a catalyst. Then the amount of methyl-silicon-three oxygen (Me-Si T-type) and hydrogen-silicon-three oxygen (H-Si T-type) bridged structures of the chemisorbed TMCTS were increased, and the amount of surface silanol groups was decreased markedly with the increasing amount of Cs concentration. Leakage current and dielectric constant were measured under various humidity conditions, and which were hardly degraded for the highly cross-linked PoSiO owing to its small amount of residual silanol groups and adsorbed water. It was also shown that the amount of mobile protons originated from the silanol groups became negligible. Time zero dielectric breakdown (TZDB) field strength was improved to 6.7 MV/cm and a projected time dependent dielectric breakdown (TDDB) lifetime satisfied 10 years for Cs 30 ppm doped PoSiO under a stress conditions of 220°C and |E| = 1 MV/cm.
journal title
Journal of The Electrochemical Society
volume
Volume 155
issue
Issue 11
start page
G258
end page
G264
date of issued
2008
publisher
The Electrochemical Society, Inc.
issn
0013-4651
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
author
rights
Copyright (c) 2008 The Electrochemical Society
relation url
department
Research Center for Nanodevices and Systems