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ID 43616
file
Thumnail k7236_3.pdf 8.58 MB
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title alternative
高電力用途における窒化ガリウム高電子移動度トランジスタのコンパクトモデル
creator
Mizoguchi, Takeshi
NDC
Physics
language
eng
nii type
Thesis or Dissertation
HU type
Doctoral Theses
DCMI type
text
format
application/pdf
text version
ETD
relation references
Analysis of GaN High Electron Mobility Transistor Switching Characteristics for High-Power Applications with HiSIM-GaN Compact Model; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans JUrgen Mattausch; Japanese Journal of Applied Physics, Vol. 55, 04EG03-1-5, (2016).
Modeling of Field-Plate Effect on Gallium-Nitride-based High Electron Mobility Transistors for High-Power Applications; Takeshi Mizoguchi, Toshiyuki Naka, Yuta Tanimoto, Yasuhiro Okada, Wataru Saito, Mitiko Miura-Mattausch, and Hans Jurgen Mattausch; The Institute of Electronics, Information and Communication Engineers Transactions on Electronics, Vol. E100-C, No. 3, pp. 321-328, (2017).
relation references URL
https://doi.org/10.7567/JJAP.55.04EG03
https://doi.org/10.1587/transele.E100.C.321
grantid
甲第7236号
degreeGrantor
広島大学(Hiroshima University)
degreename Ja
博士(工学)
degreename En
Doctor of Engineering
degreelevel
doctoral
date of granted
2017-03-23
department
Graduate School of Advanced Sciences of Matter