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ID 14991
file
creator
Barla, A.
Sanchez, J.P.
Aksungur, A.
Lengsdorf, R.
Plessel, J.
Doyle, B.P.
Ruffer, R.
abd-Elmeguid, M.M.
abstract
The effect of pressure on the electronic and magnetic properties of the antiferromagnetic (TN~43 K) narrow gap semiconductor UNiSn has been investigated by 119Sn Mössbauer spectroscopy and nuclear forward scattering of synchrotron radiation, electrical resistance, and x-ray diffraction. We show that the decrease of the semiconducting gap which leads to a metallic state at p~9 GPa is associated with an enhancement of TN. At higher pressures, both TN and the transferred magnetic hyperfine field decrease, with a collapse of magnetism at ~18.5 GPa. The results are explained by a volume-dependent competition between indirect Ruderman-Kittel-Kasuya-Yosida interaction and the 5f-ligand hybridization.
journal title
Physical Review
volume
Volume 71
start page
020402
date of issued
2005
publisher
American Physical Society
issn
1098-0121
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2006 American Physical Society
relation is version of URL
http://dx.doi.org/10.1103/PhysRevB.71.020402
department
Graduate School of Advanced Sciences of Matter