Yokoyama, Shin - author list - Hiroshima University Institutional Repository

ID (desc)

飛行時間測定法を用いた中速イオン散乱法の開発と半導体プロセス評価への応用

creator	Yokoyama, Shin; Hirose, Masataka; Miyazaki, Seiichi; 桜田勇蔵;

GaAs及びSi上への絶縁膜の形成

creator	Yokoyama, Shin;

電気光学材料を用いたリング共振器光スイッチのSiLSI上へのモノリシック集積

creator	Yokoyama, Shin;

MOSトランジスタのソース・ドレイン近傍でのドーパント2次元拡がり測定の研究

creator	Shibahara, Kentaro; Yokoyama, Shin;

Atomic-layer-deposited silicon-nitride/SiO2 stacked gate dielectrics for highly reliable p-metal–oxide–semiconductor field-effect transistors

creator	Nakajima, Anri; Yoshimoto, Takashi; Kidera, Toshiro; Obata, Katsunori; Yokoyama, Shin; Sunami, Hideo; Hirose, Masataka;
journal title	Applied Physics Letters
volume	Volume 77
issue	Issue 18
date of issued	2000-10-30

Characterization of silicon/oxide/nitride layers by x-ray photoelectron spectroscopy

creator	Hansch, Walter; Nakajima, Anri; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 75
issue	Issue 11
date of issued	1999-09-13

Growth and electrical properties of atomic-layer deposited ZrO2 /Si-nitride stack gate dielectrics

creator	Ishii, Hiroyuki; Nakajima, Anri; Yokoyama, Shin;
journal title	Journal of Applied Physics
volume	Volume 95
issue	Issue 2
date of issued	2004-01-15

Coulomb blockade effects and conduction mechanism in extremely thin polycrystalline-silicon wires

creator	Kawamura, Kensaku; Kidera, Toshiro; Nakajima, Anri; Yokoyama, Shin;
journal title	Journal of Applied Physics
volume	Volume 91
issue	Issue 8
date of issued	2002-04-15

Monolithically integrated optical modulator based on polycrystalline Ba0.7Sr0.3TiO3 thin films

creator	Xu, Zhimou; Suzuki, Masato; Tanushi, Yuichiro; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 88
issue	Issue 17
date of issued	2006-04-17

Conduction mechanism of Si single-electron transistor having a one-dimensional regular array of multiple tunnel junctions

creator	Nakajima, Anri; Ito, Yuhei; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 81
issue	Issue 4
date of issued	2002-07-22

Fabrication of Si single-electron transistors having double SiO2 barriers

creator	Ito, Yuhei; Hatano, Tsuyoshi; Nakajima, Anri; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 80
issue	Issue 24
date of issued	2002-06-17

Reliable extraction of the energy distribution of Si/SiO2 interface traps in ultrathin metal–oxide–semiconductor structures

creator	Khosru, Quazi Deen Mohd; Nakajima, Anri; Yoshimoto, Takashi; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 80
issue	Issue 21
date of issued	2002-05-27

NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

creator	Nakajima, Anri; Khosru, Quazi Deen Mohd; Yoshimoto, Takashi; Kidera, Toshirou; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 80
issue	Issue 7
date of issued	2002-02-18

Soft-breakdown-suppressed ultrathin atomic-layer-deposited silicon–nitride/SiO2 stack gate dielectrics for advanced complementary metal–oxide–semiconductor technology

creator	Khosru, Quazi Deen Mohd; Nakajima, Anri; Yoshimoto, Takashi; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 21
date of issued	2001-11-19

Low-temperature formation of silicon nitride gate dielectrics by atomic-layer deposition

creator	Nakajima, Anri; Yoshimoto, Takashi; Kidera, Toshirou; Yokoyama, Shin;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 5
date of issued	2001-07-30

Self-limiting atomic-layer deposition of Si on SiO2 by alternate supply of Si2H6 and SiCl4

creator	Yokoyama, Shin; Ohba, Kenji; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 5
date of issued	2001-07-30

Low-temperature selective deposition of silicon on silicon nitride by time-modulated disilane flow and formation of silicon narrow wires

creator	Yokoyama, Shin; Ohba, Kenji; Kawamura, Kensaku; Kidera, Toshiro; Nakajima, Anri;
journal title	Applied Physics Letters
volume	Volume 79
issue	Issue 4
date of issued	2001-07-23