Charge density distribution of transparent p-type semiconductor (LaO)CuS
Use this link to cite this item : https://ir.lib.hiroshima-u.ac.jp/00018827
ID | 18827 |
file | |
creator |
Takase, Kouichi
Sato, Ken
Shoji, Osamu
Takano, Yoshiki
Sekizawa, Kazuko
Goto, Manabu
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abstract | The charge density distributions of layered oxysulfide (LaO)CuS, known as a p-type transparent semiconductor, have been investigated by analyzing the synchrotron radiation powder diffraction profile with the maximum entropy method/Rietveld method. The bonding character of the Cu–S bond is revealed to be covalent. Meanwhile, the O–La bonding has both ionic and covalent characters. The number of electrons estimated by integrating the charge density around each atom gave direct evidence that each CuS and LaO layer is electrically almost neutral.
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journal title |
Applied Physics Letters
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volume | Volume 90
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issue | Issue 16
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start page | 161916-1
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end page | 161916-3
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date of issued | 2007-04-19
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publisher | American Institute of Physics
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issn | 0003-6951
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ncid | |
publisher doi | |
language |
eng
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nii type |
Journal Article
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HU type |
Journal Articles
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DCMI type | text
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format | application/pdf
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text version | publisher
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rights | Copyright (c) 2007 American Institute of Physics.
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relation url | |
department |
Graduate School of Science
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