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ID 31965
file
creator
Yamaoka, Hitoshi
Jarrige, Ignace
Tsujii, Naohito
Imai, Motoharu
Lin, Jung-Fu
Matsunami, Masaharu
Eguchi, Ritsuko
Arita, Masashi
Taguchi, Munetaka
Senba, Yasunori
Ohashi, Haruhiko
Hiraoka, Nozomu
Ishii, Hirofumi
Tsuei, Ku-Ding
NDC
Physics
abstract
We performed an x-ray spectroscopic study combining resonant x-ray emission spectroscopy (RXES) and photoelectron spectroscopy on the superconducting ternary silicide YbGa_<1.15>Si_<0.85> and nonsuperconducting ternary germanide YbGa_xGe_<2-x> (x = 1.0 and 1.1). The Yb valence for all three compounds is found to be about 2.3. In YbGa_<1.15>Si_<0.85> no temperature dependence of the Yb valence is observed in the RXES spectra in the temperature range of 7-300 K, while the valence shows a drastic increase under pressure from the Yb^<2+> state partially including itinerant electrons to the localized Yb^<3+> state. Differences are observed in the valence-band spectra of the photoelectron spectroscopy between YbGa_<1.15>Si_<0.85> and YbGa_xGe_<2-x>, which may be attributed to the difference of crystal structure. We conclude that both the crystal structure of the planar GaSi layer in YbGa_<1.15>Si_<0.85> and the resultant electronic structure may have a crucial role in the occurrence of superconductivity.
journal title
Physical Review B
volume
Volume 83
issue
Issue 10
start page
104525-1
end page
104525-10
date of issued
2011-03-31
publisher
The American Physical Society
issn
1098-0121
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 2011 The American Physical Society
relation url
department
Hiroshima Synchrotron Radiation Center