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ID 18771
file
creator
Endo, Ichita
Harada, Minoru
Kobayashi, Takashi
Lee, Y. S.
Ohgaki, Tomomi
Muto, Masayuki
Yoshida, Katsuhide
Nitta, Hideo
Potylitsin, A. P.
Zabaev, V. N.
Ohba, Takuya
abstract
The parametric x radiation from thick Si single crystals with 0.5–5 mm thickness was investigated at an electron energy of 900 MeV. As the crystal thickness increased, both intensity and angular spread reached a plateau after their increase in the thin crystal region, resulting in more brilliant x rays than Feranchuk and Ivashin's prediction [J. Phys. (Paris) 46, 1981 (1985)] for thick crystals. This behavior is consistent with the incoherent model proposed in our previous paper [Phys. Rev. Lett. 70, 3247 (1993)].
journal title
Physical Review E
volume
Volume 51
issue
Issue 6
start page
6305
end page
6308
date of issued
1995-06
publisher
American Physical Society
issn
1063-651X
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 1995 American Physical Society.
relation url
department
Graduate School of Advanced Sciences of Matter