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ID 19294
file
creator
Echizen, Yuji
Yoshino, Takenobu
Kobayashi, Katsushi
Nakamoto, Go
Fujii, Hironobu
abstract
The effect of doping in CeNiSn has been studied by the measurements of electrical resistivity, Hall coefficient and magnetic susceptibility for single crystals of CeNi1-xTxSn (T=Co, Cu, and Pt) and Ce1-yLayNiSn (x,y = 0.01 and 0.05). All these impurities are found to increase the residual resistivity by several times up to 1 mΩ cm for x or y = 0.01, while for x or y = 0.05 the resistivities along the orthorhombic b and c axes saturate to values smaller than those for 0.01. Furthermore, the low-temperature increase in the Hall mobility of CeNiSn was found to be strongly suppressed in a similar way by all the impurities. These results indicate that residual carriers in CeNiSn with an anisotropic gap are immobilized by any impurity substituted either in the 4f site or the non-4f site.
journal title
Physical Review B - Condensed Matter and Materials Physics
volume
Volume 59
issue
Issue 21
start page
13 878
end page
13 881
date of issued
1999-06-01
publisher
American Physical Society
issn
1098-0121
ncid
publisher doi
language
eng
nii type
Journal Article
HU type
Journal Articles
DCMI type
text
format
application/pdf
text version
publisher
rights
Copyright (c) 1999 The American Physical Society.
relation url
department
Graduate School of Advanced Sciences of Matter